The Zn–Bi–O films were deposited by reactive radio frequency magnetron sputtering in oxygen atmosphere from ZnBi alloy target (wt% ratio Zn:Bi=9:1) on glass substrate at room temperature. The XRD patterns show that the films deposited on tin-doped indium oxide/glass substrates were nanocrystalline. The microstructure of Bi-doped ZnO films was studied by scanning electron microscopy in combinati...

Mixed-conducting lithium-ion doped emeraldine polyaniline (PAni)–polyethylene oxide (PEO) blends have been developed to achieve an optimal electronic– ionic conductivity balance in nano-tin composite anodes. Electrochemical evaluation was performed on the anodes with differing electrode preparation procedures, doping methods and PEO contents. Results indicate that both good electronic and ionic...

Dissimilatory metal reducing bacteria are capable of extracellular electron transfer (EET) to insoluble metal oxides as external electron acceptors for their anaerobic respiration, which is recognized as an important energy-conversion process in natural and engineered environments, such as in mineral cycling, bioremediation, and microbial fuel/electrolysis cells. However, the low EET efficiency...

a r t i c l e i n f o Keywords: Work function Indium tin oxide Zinc indium tin oxide Transparent conducting oxide Ultraviolet photoelectron spectroscopy X-ray photoelectron spectroscopy Thin film X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn–In–Sn–O (ZITO) thin films, ex situ pulsed laser deposited...

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By p...

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern rev...