The anisotropic etching behavior of single-crystal silicon and the behavior of SiO2 and Si3N4 in an ethylenediaminebased solution as well as in aqueous KOH, NaOH, and LiOH were studied. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant composition. A correlation was found between the etch rates and thei...