Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a...

In this article, an optimum ferrite beads design method is proposed to suppress the self-sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors (GaN HEMTs). At first, impacts gate loop and power on GaN HEMTs are analyzed. The analysis reveals weak damping effect oscillation. Next, analytical that can achieve maximum effective introduce extra stray inductanc...

The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported.

In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting resistances, when varying channel length and gate width, are comparable those obtained with pulsed measurements, by making use positive drain-to-source voltages from a zero power dissipation quiescent bias po...

Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically the effet AlN interlayer electronic and electric characteristics using Nextnano software. 2D–electron gas density In0.17Al0.83N/AlN/GaN HEMTs is investigated through dependence various layer thickness, report calculations I-V characte...

Abstract AlGaN/GaN high electron mobility transistors (HEMTs) with different device sizes were prepared and exposed to 0.4 MeV proton irradiation. The low-field carrier transport characteristics of the gate channel are obtained from capacitance-voltage curves current-voltage curves. For a longer gate-drain distance (30 μm), after irradiation, gate-channel increases by 14.3% on average. shorter ...

With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate self-heating effect. Incorporating diamond into GaN HEMT an alternative way dissipate heat generated from active region. In this review, four main approaches for integration and are briefly reviewed, including bonding wafer together, depositing as a he...

Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper will present the recent development of metamorphic HEMTs and HBTs and discuss their readiness for commercialization.

Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Andrew Ketterson, Michael Schuette, Edward Beam, Paul Saunier, Xiang Gao , ShipingGuo , Patrick Fay, Debdeep Jena, and Huili Grace Xing Department of Electrical Engineering, University of Notre Dame, USA, *[email protected], Triquint Semiconductor, USA,...

Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on performance Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate improved heat device GaN HEMTs with different thicknesses Si substrate (50, 100, 150 μm), without ad...