Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consist...

The doping effects of Al2O3 on SiO2 ( -cristobalite) have been studied by first principles calculations, with emphasis on the structural, electronic and optical properties. Compared to pure SiO2 crystal, the electronic density of states (DOS) of the Al2O3 doped SiO2 show significant changes. The electron energy states corresponding to the newly emerged sharp DOS peaks are found to exhibit local...

We report flicker noise measurements combined with deep-level transient spectroscopy of the doped and undoped channel GaN/AlGaN heterostructure field-effect transistors. The lowtemperature noise spectra for the doped devices show clear generation-recombination peaks. The value of the activation energy extracted from these noise peaks is consistent with the activation energies measured using dee...

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecu...

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...

The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied ...

This article contains data of time of flight secondary ion mass spectrometry (TOF-SIMS) analysis of brushite-forming calcium phosphate cements doped with biologically active metal ions. This data are related to the research article "Cu2+, Co2+ and Cr3+ doping of a calcium phosphate cement influences materials properties and response of human mesenchymal stromal cells" (Schamel et al., 2017) [1]...

Zn and Ni impurities in the hole-doped high-temperature superconductors are known to have strong effects on thermodynamic and transport properties. A recent scanning tunneling microscope study of Zn-doped Bi2212 (Pan et al., Nature 403, 746 (2000)) has provided high-resolution images of the local density of states around non-magnetic impurities in dx2−y2-wave superconductors. These pictures con...

A detailed study has been presented of optical, electrical, structural and magnetic properties of Zn1–xCoxO (0 < x ≤ 0.25) films co-doped with 1 at. % of Al. The polycrystalline films have been synthesized on Corning glass 7059 substrates by the sol-gel technique using spin coating. Highly preferential c-axis oriented films have been obtained at the annealing temperature of 600 °C. The lattice ...