Multifrequency polarimetry with the VLBA confirms the previously reported timevarying Faraday rotation measure (RM) in the quasar 3C 279. Variability in the RM and electric vector position angle (EVPA) of the jet component (C4) is seen making it an unreliable absolute EVPA calibrator. 3C 273 is also shown to vary its RM structure on 1.5 year time-scales. Variation in the RM properties of quasar...

We report a summer influenza epidemic caused by co-circulation of multiple influenza A(H3N2) variants in clade 3C.2a. Compared with other clades, a putative clade 3C.2a.3a was more commonly isolated from severely ill patients; 3C.2a.4 was more commonly isolated in outbreak cases. Time from vaccination to illness onset was significantly shorter in severely ill patients infected with clade 3C.2a....

reaction of 5-phenyl tetrazole with ethyl chloroacetate to form ethyl (5-phenyl-1h-tetrazol-1-yl) acetate (1). compound 1 react with hydrazine hydrate in ethanol yield 2-(5-phenyl-1h-tetrazol-1-yl) acetohydrazide (2). the condensation of (2) with various aldehydes yield the corresponding substituted n'-[-arylidene]-2-(5-phenyl-1h-tetrazol-1-yl) acetohydrazide (3a- j). the compounds obtaine...

The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...

Three edges e1, e2 and e3 in a graph G are consecutive if they form a path (in this order) or a cycle of length 3. The 3 -consecutive edge coloring number ψ′ 3c(G) of G is the maximum number of colors permitted in a coloring of the edges of G such that if e1, e2 and e3 are consecutive edges in G, then e1 or e3 receives the color of e2. Here we initiate the study of ψ′ 3c(G). A close relation be...

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...