در این پژوهش تقویت باریکه لیزر تپی فمتوثانیه Ti:sapphire ­کننده بازتولیدی با آرایش هندسی Z براساس روش تپ چیرپ بررسی شده است. برای انتقال ورودی اولیه به داخل کاواک و استخراج از دو سلول پاکل استفاده زمان شکل‌گیری برحسب انرژی دمش مطالعه روند تحول مورد قرار گرفته مدت تولید بدون حضور 80 نانوثانیه فرایند 38 نرخ تکرار 10 هرتز طول موج مرکزی 800 نانومتر بیشینه 2 میلی‌ژول بعد 17 رفت برگشت 15 میلی ژول 532...

O abscesso agudo é uma manifestação comum e necessita de tratamento emergencial. Em seu estágio avançado pode drenar espontaneamente através de fístula, podendo ser extrabucal, dependendo do dente causador, localização radicular, espessura do osso e inserções musculares. A drenagem espontânea pode deixar cicatriz significante. Uma fístula extrabucal que faz comunicação com a boca recebe constan...

This paper describes the attributes and goals for a radiation-hard and high-reliability Field Programmable Gate Array (FPGA). The first Qualified Manufacturer List (QML) radiation-hardened antifuse FPGA, RH1280, is characterized. Its total dose and Single Event Effects (SEEs) are tested and the results are reported. Trade-offs and limitations in Single Event Upset (SEU) hardening are also discu...

THE TITLE COMPOUND (SYSTEMATIC NAME 4-{[(2E)-5-hydr-oxy-3,7-dimethylocta-2,6-dien-1-yl]-oxy}-7H-furo[3,2-g][1]benzopyran-7-one), C(21)H(22)O(5), is a known furan-ocoumarin, which was isolated from the Chinese herbal product Radix seu Rhizoma Notopterygii. The crystal structure shows a weak O-H⋯O hydrogen bond.

PROBLEMA 1: Em que situações podemos trocar as posições dos pon-teiros de um relógio (que tem ponteiros das horas e dos minutos) e continuar obtendo uma hora possível? Mostre que essé e um fenômeno periódico e cal-cule seu período.

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and sin...

The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.

THIS SUPPLEMENT CONSISTS OF EIGHT SECTIONS. In Section S.1, we illustrate the use of SARSEU through a few simple theoretical exercises. In each case, the exercise is to present a well known alternative to risk-averse SEU and to show that data generated by these theories can violate SARSEU. In Section S.2, we show that, in the 2 × 2 case, SARSEU is equivalent to requirements (5) and (6) in the m...

This work analyzes an effect of single-bit error in configuration memory of FPGA. Several fault models are proposed and described in detail. Software estimation of vulnerable bits from bitstream is presented, in conjunction with the SEU hardware emulator, which experimentally tests a correctness of the estimation. Results of several combinational benchmark are presented and s1488 benchmark disc...