CMOS Single Photon Avalanche Diode (SPAD) arrays are emerging as appealing solid-state detectors in imaging applications where high sensitivity and timing resolution are required. In this work, a 32x32-pixel array where SPAD digital output is processed in the analog domain in a 12-transistor pixel is presented. A 25m pixel pitch with a remarkable 20.8% fill factor was achieved thanks to a very...

We present the challenges of using single-photon avalanche diodes in large arrays and the architectures employed in the readout systems. We also discuss the elements that make these imagers appealing for some applications and why.

Abiotic stress can alter key physiological constituents and functions in green plants. Improving the capacity to monitor this response in a non-destructive manner is of considerable interest, as it would offer a direct means of initiating timely corrective action. Given the vital role that plant pigments play in the photosynthetic process and general plant physiological condition, their accurat...

We propose the use of dynamic circuits for quenching avalanche events in single photon avalanche diode (SPAD) arrays. Two area-efficient, circuit solutions are presented in 0.35μm CMOS technology. These circuits contain no passive elements and consume shoot-through current only at triggering instants. The resulting reduction in power consumption and supply noise is essential to formation of lar...

Although maize (Zea mays L.) routinely experiences both intraand interspecific competition for limited resources, most plant-plant interaction studies have principally focused on maize-weed interactions. Thus very few investigations have considered the impacts of plant crowding and nitrogen (N) availability on maize intra-specific competition. The primary objective of this two-year field study ...

A shared well 4x4 SPAD array test structure with 3m pitch is realized in a 130nm CMOS image sensor technology. The SPADs have 150Hz median DCR at room temperature at 1V excess bias, 15% peak PDP and 176ps FWHM timing jitter both at 3V excess bias.

A shared well 4x4 SPAD array test structure with 3m pitch is realized in a 130nm CMOS image sensor technology. The SPADs have 150Hz median DCR at room temperature at 1V excess bias, 15% peak PDP and 176ps FWHM timing jitter both at 3V excess bias.

InP-based single photon avalanche diodes (SPADs) have proven to be the most practical solution currently available for many applications requiring high-performance photon counting at near-infrared wavelengths between 1.0 and 1.6 μm. We describe recent progress in the design, characterization, and modeling of InP-based SPADs, particularly with respect to the dark count rate vs. photon detection ...

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A SPAD-based line sensor fabricated in 130 nm CMOS technology capable of acquiring time-resolved fluorescence spectra (TRFS) in 8.3 milliseconds is presented. To the best of our knowledge, this is the fastest time correlated single photon counting (TCSPC) TRFS acquisition reported to date. The line sensor is an upgrade to our prior work and incorporates: i) parallelized interface from sensor to...