One-dimensional (1D) metal oxide nanomaterials, such as zinc oxide (ZnO) nanowires and nanobelts (or nanoribbons), have recently attracted immense attention due to their sizeand shape-dependent optical, mechanical, and electronic properties. In stark contrast, investigations of 1D zirconia (ZrO2) and hafnia (HfO2) nanomaterials remain unexploited largely because of the formidable challenges ass...

The effect of the layered InSe intercalation structure on ferroelectric properties HfO2 was investigated. At low crystallization temperatures, phase is formed more easily. Stronger polarization and better reliability can be achieved. This result indicates that promising for engineering HfO2.

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest this material and ferroelectric oxides are once again the spotlight of memories industry. Great efforts being made to understand control properties. Epitaxial which have fewer defects a more controlled microstructure than can be very useful for purpose. films been much les...

We investigate the emerging chemical states of TiN/HfO2/TiN capacitors and focus especially on identification vacancies impurities in ferroelectric HfO2 layers, which are produced either by physical vapor deposition (PVD) or atomic layer (ALD). Depending specific growth conditions, we identify different mechanisms oxygen vacancy formation. Corresponding spectral features consistently observed f...

Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectr...

The advantage of PARMS for the manufacturing of high performance low loss coatings is demonstrated with UVand VIS band pass filter based on HfO2 respectively Nb2O5 and SiO2.

In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at...

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mec...

The tunneling effect through a thin HfO2 layer enables CsPbBr3/HfO2/Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co-workers demonstrate that the performance of device can be modulated both Vds Vgs, providing flexibility for different applications.

This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. Empirical relations for these two quantities are presented demonstrating that only a few dielectrics...