نتایج جستجو برای: خطسانی iip3

تعداد نتایج: 318  

2010
Desheng Ma Fa Foster Dai Richard C. Jaeger David Irwin

In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

2014
Mohammed Shinas

ABSTRACT: A low power ultra wide band down conversion mixer is presented briefly in this paper. In this design, transistors are biased to operate in weak-inversion region so as to reduce the total power consumption of the mixers. The proposed circuit uses source-driven topology and has been designed using 0.18μm standard RF CMOS process. The simulated result shows a total power consumption of 1...

2010
C.-P. Chang W.-C. Chien C.-C. Su Y.-H. Wang

A fully integrated 5.5 GHz high-linearity low noise amplifier (LNA) using post-linearization technique, implemented in a 0.18μm RF CMOS technology, is demonstrated. The proposed technique adopts an additional folded diode with a parallel RC circuit as an intermodulation distortion (IMD) sinker. The proposed LNA not only achieves high linearity, but also minimizes the degradation of gain, noise ...

2014
Saeid Yasami Magdy Bayoumi

A CMOS low noise amplifier with current folded technique has been proposed for ultra-low voltage, ultra-low power biomedical applications. The target frequency is 2.4 GHz and the proposed LNA is implemented in standard 65 and 90 nm CMOS technologies. By exploiting forward body biasing technique in current folded architecture, the LNA is biased in subthreshold region with supply voltage of 350 m...

2016
Raja Mahmou Khalid Faitah

A design of RF down-conversion Gilbert-Cell, with 65 nm CMOS technology, at a supply voltage of 1.8 V, with a new degenerating structure to improve linearity. This architecture opens the way to more integrated CMOS RF circuits and to achieve a good characteristics in terms of evaluating parameters of RF mixers with a very low power consumption (2.17 mW). At 1.9 GHz RF frequency; obtained result...

2009
Edward A Keehr Ali Hajimiri A Hajimiri

An effective linearization technique capable of equalizing IM3 products resulting from an arbitrary out-of-band blocking scenario in a wideband direct conversion receiver is presented. IM3 products are regenerated in the RF analog domain of a low-power mixed-signal feedforward path and are used to cancel analogous signal terms in the original receiver at digital baseband via adaptive equalizati...

2013
Meng-Ting Hsu Yu-Hwa Lin

This paper presents an UWB low noise amplifier (LNA) based on current reused topology to achieve low power on overall circuit in the band of 3~16GHz. Measurement of the input and output reflection coefficient S11, S22 are less than 10 dB, the maximum amplifier gain S21 gives 9.7dB, the minimum of the noise figure is 4.2dB, the measured IIP3 is 8.5dBm at 6GHz. It consumes 11mW power consumption ...

Journal: :IEICE Transactions 2008
Jun-Da Chen Zhi-Ming Lin Jeen-Sheen Row

A low-voltage and low-power RF mixer for WCDMA applications is presented. The paper presents a novel topology mixer that leads to a better performance in terms of isolation and power consumption for low supply voltage. The measuring results of the proposed mixer achieve: 7dB power conversion gain, 10.4dB double side band (DSB) noise figure, -2dBm input third-order intercept point (IIP3), and th...

2008
Chih-Hau Chen Christina F. Jou

A 3–8 GHz broadband mixer is presented in this paper. This broadband mixer is low power and high conversion gain. It provides current reuse and ac-coupled folded switching. This mixer is designed in TSMC 0.18-μm CMOS technology. This broadband mixer achieves simulated conversion gain of 9 ± 1.5 dB, a single sideband noise figure lower than 15.2 dB and IIP3 batter than −7 dBm. From 3–8GHz, at su...

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