An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ''temperature'' T decreasing exponentially in annealing-time k, T = T 0 exp(−ck 1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multi-dimensional ...

We study the performance of quantum annealing for systems with ground-state degeneracy by directly solving the Schrödinger equation for small systems and quantum Monte Carlo simulations for larger systems. The results indicate that quantum annealing may not be well suited to identify all degenerate ground-state configurations, although the value of the ground-state energy is often efficiently e...

In Saccharomyces cerevisiae, Rad52 protein plays an essential role in the repair of DNA double-stranded breaks (DSBs). Rad52 and its orthologs possess the unique capacity to anneal single-stranded DNA (ssDNA) complexed with its cognate ssDNA-binding protein, RPA. This annealing activity is used in multiple mechanisms of DSB repair: single-stranded annealing, synthesis-dependent strand annealing...

In this work, we propose a Hybrid particle swarm optimization-Simulated annealing algorithm and present a comparison with i) Simulated annealing algorithm and ii) Back propagation algorithm for training neural networks. These neural networks were then tested on a classification task. In particle swarm optimization behaviour of a particle is influenced by the experiential knowledge of the partic...

An annealing time of 30-45 seconds is commonly used in PCR reactions. Increase in annealing time up o 2-3 minutes did not appreciably influence the outcome of the PCR reactions. However, as the polymerase has some reduced activity between 45 and 65 C (interval in which most annealing temperature are chosen), longer annealing times may increase the likelihood of unspecific amplification products...

Visible light emission from Si implanted SiO2 layers as a function of different annealing conditions ~temperature, time and ambient! is studied. It is shown that a 560 nm band, present in as implanted samples, increases its intensity for increasing annealing temperatures and is still observed after annealing at 1000 °C. The emission time is fast ~0.5–2 ns!. A second band centered at 780 nm is d...

The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of amorphous indium thin film. The later film is pre-deposited on glass with thermal evaporation. We have studied the effect of the temperature and the annealing time on the structural and morphological properties In2S3 thin films. The X-ray diffraction (XRD) shows a good crystallinity found until the anneali...

The development, during annealing, of periodic one-dimensional ripple structure has been investigated. The nanoscale ripple array was fabricated on silicon(0 0 1) crystal surface using focused ion beam (FIB). Annealing was performed isothermally in a flowing argon gas ambient at 670 8C. The morphology of the ripple before and after annealing was analyzed by use of atomic force microscope. The h...