نتایج جستجو برای: w band amplifier

تعداد نتایج: 346600  

2017

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: t/s where t is the unity gain frequency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity g...

Journal: :International Journal of Rf and Microwave Computer-aided Engineering 2023

In this brief, a novel filtering impedance transformer with good selectivity and high termination is proposed, of which close-formed design equations are derived effectively verified. Then, dual-band dual-output power amplifier (PA) operating at 2.4-2.6 GHz 3.4-3.6 designed based on the proposed transformer. The PA contains diplexer-like output matching network, can separate two band signals in...

Journal: :IEICE Electronic Express 2013
Oguzhan Kizilbey

In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental...

2014
Young Key Kwon Simon P. Chard Nick Hay Aleksej M. Rodin Michael Bass Ying Chen Hong Shu Scott Webster

We demonstrate power scaling of an Nd:YAG picosecond master oscillator power amplifier system to over 200 W. The ‘z-slab’ amplifier design is a power scalable, edge-pumped zigzag slab amplifier architecture, and it is demonstrated here in two alternative multi-stage implementations at 1064 nm using a picosecond seed laser. In a simple design, an average power of 225 W was generated with up to 4...

2005
C. W. Huang S. J. Chang W. Wu C. L. Wu C. S. Chang

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...

2005
C. LAPORTE ALLET A. ANAKABE

This paper deals with the evaluation of the traditional Travelling Wave Tube Amplifier (TWTA) output power model completed with an associated power efficiency estimation with multi carrier signal. A 120 W Ka Band linearised TWTA is used to propose a full comparison between simulated and measured results concerning up to four modulated carriers as an input signal. Three different regions of outp...

Journal: :IEICE Electronic Express 2017
Min Zhang Zongxi Tang Weimin Shi Xin Cao

In this paper, a resistive-reactive series of continuous inverse modes is proposed for extending bandwidth of the series of Inverse continuous mode (SICM). A broadband class inverse F power amplifier (PA), which operates across 2.5-4.1GHz (48.5% bandwidth), is designed by using bare GaN HEMT to prove this theory. Experiment results indicate that the PA mentioned above is able to output 9.1-18.4...

In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...

1998
KAZUHIKO HONJO YOICHIRO TAKAYAMA

..4bstract—A novel ultrabroad-band amplifier configuration suitable for GaAs FET’s has been developed. The developed amplifier circuit operates as a capacitor-resistor ( C–R ) coupled mnpfifier circuit in the lowfrequency range in which IS21 I for the GaAs FET’s is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which IS21 I for the GaAs F...

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