This paper deals with the fault ride-through capability assessment of a doubly fed induction generator-based wind turbine using a high-order sliding mode control. Indeed, it has been recently suggested that sliding mode control is a solution of choice to the fault ride-through problem. In this context, this paper proposes a second-order sliding mode as an improved solution that handle the class...

Thin Film Transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO TFT) are receiving a great deal of attention for their numerous applications as alternatives for amorphous and poly-crystalline Silicon based TFTs. A major concern about a-IGZO TFTs is that they suffer from instabilities when subjected to different types of stress (bias, light, etc...). Stress is believed to create defec...

This paper proposes an equivalent circuit model to obtain the transient electrical stress quantitatively in medium voltage frequency transformers modern power electronics. To verify this model, simulation is performed on a 1.5 kV/1 kHz transformer, revealing overshoot between turns and layers of transformer’s HV winding. Effects rise time input pulse voltage, stray capacitance winding insulatio...

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the It2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices a...

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the It2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices a...

Forward converters generally exhibit poor power factor when employing in the AC-DC conversion, due to the presence of zero input current near the zero crossing of line input voltage. In this paper, a single-switch forward converter with high power factor and low storage capacitor voltage stress is proposed. By adding a stack up voltage on top of the reflected input voltage on the forward conver...

We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsibl...

The inherent nature of normal boost converter has more voltage stress across the power electronics switch and ripple. The presented formation of the front end rectifier stage for a photovoltaic (PV) organization is mainly used to give the supply. Further increasing of the solar efficiency is achieved by connecting the zero voltage soft switching boost converter. The zero voltage boost converter...

The article presents a single phase asymmetrical multilevel inverter with reduced components and low voltage stress which reduces the size cost of system. structure provides maximum output 23 levels DC sources. There exists several reliability issues in lowering total harmonic distortion (THD) by utilizing higher design MLI despite its merits. Achieving THD is challenging task for researchers. ...