In integrated circuit industry, device metrology is crucial to the future development of semiconductor industry. Critical dimension scanning electron microscope (CD-SEM) is used as a tool for the linewidth measurement and critical dimension (CD) metrology. However, the signal intensity in a secondary electron image obtained by CD-SEM is influenced not only by geometry character of specimen but ...

The metrology implemented in several classical software equipping the coordinate measuring machines, does not correspond to the standardized tolerancing by zones, virtual conditions and perfect datum features fitted outside the matter. On the basis of these concepts and by generalizing them, a conceptual model of "fitting virtual gauges" is presented. On a part presenting two positional toleran...

The problem of fundamental units is discussed in the context of achievements of both theoretical physics and modern metrology. On one hand, due to fascinating accuracy of atomic clocks, the traditional macroscopic standards of metrology (second, metre, kilogram) are giving way to standards based on fundamental units of nature: velocity of light c and quantum of action h. On the other hand, the ...

Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0.1 parts per billion, making SiC/G devices highly desirable for the endeavour of quantum resistance metrology. How...

The report summarizes the Consultative Committee for Mass (CCM) key comparison CCM.P-K4.2012 for absolute pressure spanning the range of 1 Pa to 10 000 Pa. The comparison was carried out at six National Metrology Institutes (NMIs), including National Institute of Standards and Technology (NIST), Physikalisch-Technische Bundesanstalt (PTB), Czech Metrology Institute (CMI), National Metrology Ins...

While metrology has a long tradition of use in physics and chemistry, it is rarely referred to in the software engineering measurement, and in particular, in the design and documentation of software measures. Using the ISO 9126-4 Technical Report on the measurement of software quality in use as a case study, this paper reports on the extent to which this ISO series addresses the metrology crite...

Three-dimensional integrated circuits (3D ICs) introduce wafer bonding and Through Silicon Vias (TSVs) as new modules, thus extending manufacturing requirements beyond CMOS. A 3D IC with a photosensor is taken as an example to further analyze the resulting new metrology requirements for mass production. For the wafer bond module, data on defects before and after bonding, bond interface adhesion...

Since 2020 a large consortium has been engaged in the project EMPIR 19ENV01 traceRadon to develop missing traceability chains improve sensor networks climate observation and radiation protection. This paper presents results areas of: Novel 226Ra standard sources with continuous controlled 222Rn emanation rate, radon chambers aimed create reference atmosphere field for flux monitoring. The major...

Modern industry needs quick and reliable measurement methods for measuring deformation, position, shape, roughness, etc. This thesis is mainly concerned with industrial applications of speckle metrology. Speckle metrology is an optical non-contact whole field technique that provides the means to measure; deformation and displacement, object shape, surface roughness, vibration, and dynamic event...