نتایج جستجو برای: vapour phase epitaxial growth
تعداد نتایج: 1389056 فیلتر نتایج به سال:
Several techniques have already been developed for synthesising silicon carbide (SiC) material in the form of nanospheres and nanowires/rods. Here, we report the synthesis of a distinctly different kind of SiC nanostructure in the form of three-dimensional crystalline nanowire based flower-like structures and arrays of coaxial rods. Interest in such structures centres around the combination of ...
Articles you may be interested in Structural and morphological characteristics of planar (112̄ 0) a-plane gallium nitride grown by hydride vapor phase epitaxy Appl. Two-step growth of high-quality GaN by hydride vapor-phase epitaxy Appl. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new function...
The growth of epitaxy of silicon–carbon (Si1−yCy) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si1−yCy alloy layers at growth rates of 18 nm min−1 and 13 nm min−1 for fully substitutional carbon levels of 1.8% and 2.1%, respectively,...
The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SixGe12x alloy film on Si~001! was investigated by in situ sheet resistance measurements, x-ray diffraction, conventional and high-resolution transmission electron microscopy, energy dispersive x-ray spectroscopy, and Rutherford backscattering spectrometry. Annealing amorphous-Ge/Au bilayers on Si~001! to tempe...
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth...
Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid–vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of ...
InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth pro...
The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour de...
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