Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent structures are considered as one of solutions increase a light output power. To this end, present study focuses developing transparent homoepitaxial tunnel junction (TJ) deep-UV LED. Deep-U...

An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two...

The optical gain and spontaneous emission characteristics of low In-content AlInN-delta-GaN quantum wells (QWs) are analyzed for deep ultraviolet (UV) light emitting diodes (LEDs) and lasers. Our analysis shows a large increase in the dominant transverse electric (TE) polarized spontaneous emission rate and optical gain. The remarkable enhancements in TE-polarized optical gain and spontaneous e...

We demonstrate the application of linear arrays of ultraviolet light emitting diodes (UV LEDs) at the wavelengths of 280 nm and 340 nm to the acquisition of fluorescence spectra from single particles in realtime. A compact optical system and custom electronics are employed to produce a compact, standalone biosensor. The detection sensitivity of the UV LED system is established using the biofluo...

Number of Papers published in peer-reviewed journals: Final Report: Performance Limits of Non-Line-of-Sight Optical Communications Report Title Solar blind ultraviolet (UV) communication technology holds the promise of superior non-line-of-sight (NLOS) link connectivity through atmospheric scattering, and significantly relaxed tracking and pointing requirements. During the last Project, the res...

Ultraviolet band C (UV-C) micro light-emitting diodes (micro-LEDs) provide a high energy light emission of 200–280 nm, which are brilliantly utilized in optogenetics, communications, and fluorescence. However, the limited device efficiency notably restricts grand potential application field. In this work, three types 20 × ?m 2 UV-C micro-LEDs with peak wavelength 269 nm fabricated by different ...

Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to b...

The study of the pigment apparatus (chlorophylls, carotenoids) and flavonoids will allow to reveal plants adaptation mechanisms, which subsequently can be used in ecological biochemical studies. purpose is determine content photosynthesis pigments phytomass hydroponically grown garden sage (Salvia officinalis L.) compared with open soil. Two varieties were studied: ‘Dobrinya’ ‘Kubanets’ from tw...

We present the design, growth, fabrication, integration and characterization of alternative hybrid white light sources based on the controlled layer-by-layer assembly of nanocrystals on UV-emitting nitride diodes for adjustable white light parameters. We hybridize CdSe/ZnS core–shell nanocrystals of different sizes (1.9–3.2–5.2 nm) on InGaN/GaN LEDs as a near-UV excitation source at 383 nm for ...

Improving the crystal quality of AlGaN epitaxial layers is essential for the realization of efficient III-nitride-based light emitting diodes (LEDs) with emission wavelengths below 365 nm. Here, we report on two different approaches to improve the material quality of AlGaN buffer layers for such UV-LEDs, which are known to be effective for the MOVPE growth of GaN layers. Firstly, we grew AlGaN ...