As we enter the deep submicron era, the steadily shrinking feature sizes make charge sharing much easier among physically adjacent nodes in integrated circuits, which ultimately results in DNU (Double Nodes Upset). In this paper, we propose a 16-transistor memory cell. Hspice simulation shows this cell maintains its original logic status under SNU (Single Node Upset) and DNU, while DICE (Dual I...

Ground level upsets have been observed in computer systems containing large amounts of random access memory (RAM). Atmospheric neutrons are most likely the major cause of the upsets based on measured data using the Weapons Neutron Research (WNR) neutron beam.

Over the past ten years, sociologists have broadened their view of what counts as an appropriate measure of mental health. This reflects a growing recognition that individuals express emotional upset in various ways. For example, some individuals are more likely to become depressed in response to stress while others are more likely to drink heavily. Contemporary studies often include measures o...

The need for additive manufacturing (3D printing) to create near net shape components from a wide variety of materials has grown in recent years. There are several methods build various parts by different materials. However, it is challenging construct, the with incompatible combination high temperature and creep resistance using conventional methods. Consequently, purpose this research investi...

Memory Errors Detection and Correction aim to secure the transaction of data between the central processing unit of a satellite onboard computer and its local memory. In this paper, the application of a double-bit error detection and correction method is described and implemented in Field Programmable Gate Array (FPGA) technology. The performance of the proposed EDAC method is measured and comp...