In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

In this paper, we investigate the noise and large-signal behavior of a feedback amplifier in multilayer thin-film MCMD technology. A small-signal equivalent model (including noise) of the active devive, a thin-film MHEMT, is identified. A large-signal state-space transistor model is built from timedomain data. These models are implemented in a circuit simulator and can accurately predict the no...

Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive ballistic conditions. validity of the was checked various device dimensions bias voltages. Performance parameters affecting operation region are optimized. Model developed to verify transfer characteristics monolayer transistor. Result...

Offset Corbino thin film transistor is a good candidate for high voltage (HVTFT) due to the uniform drain electric field distribution benefiting from circular structure. The physical model of offset characteristics has yet be clarified. In this study, Equations are derived describe current–voltage relations TFT with at or source sides. influence position and parameters on saturation current was...

This paper presents a physically based model for the metal–oxide–semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio...

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...