نتایج جستجو برای: transition metal oxide

تعداد نتایج: 593225  

Journal: :international journal of bio-inorganic hybrid nanomaterials 2015
a.a. dehno khalaji d. das j.s. matalobos f. gharib

in this paper, cubic nickel oxide nanoparticles were successfully prepared by solid-state thermal decomposition of nickel(ii) macrocyclic schiff-base complex at 450°c for 3 h without employing toxic solvent or surfactant and complicated equipment. nickel(ii) macrocyclic schiff-base complex was synthesized by the reaction of 1,2-bis(2-formyl-3-methoxyphenyl)propane, nicl2•6h2o and 1,3-phenylened...

2012
J Yamaura H Ohsumi K Sugimoto S Tsutsui Y Yoda S Takeshita S Kitao M Kurokuzu M Seto I Yamauchi K Ohgushi

The 5d transition metal oxide Cd2Os2O7 having a pyrochlore lattice of Os atoms exhibits a metal-insulator transition with a magnetic ordering at 227 K, but the magnetic structure in the ordered state and the origin of the transition have not yet been specified. The commensurate magnetic reflection with the propagation vector k = (0, 0, 0) was first observed in the resonant X-ray scattering usin...

Journal: :chemistry of solid materials 2015
m. ali nia asli m. a. rezvani m. oveisi l. abdollahi

transition-metal-substituted  (tms)  polyoxometalates  of  the  general  formula  [siw9m3o39], (where m = first row transition metal), has been synthesized and supported on anatase by sol–gel method under oil-bath condition. the tetrabutylammonium (tba) salts of the keggin-type polyoxotungstates  [siw9m3o39],  (m = vii, crii, mnii,  feii coii  and niii),  proved  to  be  green, reusable,  and  ...

2015
P. Kanta Rao Jose L. Contreras

The effect of transition metal doping on Pt/Al2O3 catalyst used in propane dehydrogenation reaction at 500 ̊C was studied. The preparation methods investigated were sequential impregnation (Pt followed by the 2 metal or the 2 metal followed by Pt) and co-impregnation. The metal contents of these catalysts were fixed as the weight ratio of Pt per the 2 metal of around 0.075. These catalysts were ...

In the present work, we report preparation of NiO nanoparticles with well-defined plate morphology by solid-state reaction of NiCl2∙6H2O and the Schiff base ligand N,N′-bis-(3-methoxysalicylidene)benzene-1,4-diamine), as a novel precursor via solid state thermal decomposition method. This method is a simple and environmentally friendly for preparing t...

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2006
mahtab piroozmand nasser safari abbas ali samadi

first row transition metal complexes of phthalocyanine are employed as catalysts for the oxidation of cyclohexene and cyclooctene using iodosylbenzene and pentafluoroiodosyl benzene. the catalysis was performed in dichloromethane: methanol:water (80:18:2) solvent mixture.  the products of the catalysis for cyclohexene are epoxycyclohexane, 2-cyclohexene-1-ol and 2-cyclohexene-1-one whereas for ...

2002
Emily A. Jarvis Emily A. Carter

We demonstrate markedly enhanced adhesion between oxide ceramics and conducting metals via promoting open-shell electronic structure at the interface, by using a more covalent oxide or doping with early transition metals. Open-shell character suppresses closed-shell repulsions and permits local covalent and/or donoracceptor bonding, even in the absence of a conventional reaction layer. The dram...

M. Khorasani-Motlagh M. Yousefi S. Z. Mohammadi Sh. Jahani

α-Fe2O3 (hematite) is the most stable iron oxide under ambient conditions. This transition metal oxide has been extensively investigated because it has unique electrical and catalytic properties. In this report, a novel microwave method for preparation of α-Fe2O3 nanoparticles has been developed. The process contained two steps: first, precursor were obtained from a mixed solution of 50 ml of 0...

2013
Santosh K. Gupta S. Baishya

Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...

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