نتایج جستجو برای: transistor

تعداد نتایج: 18676  

Journal: :IEICE Electronic Express 2013
Xiaobao Chen Zuocheng Xing Bingcai Sui Shi-Ce Ni

A novel reconfigurable hybrid single electron transistor/MOSFET (SETMOS) circuit architecture, namely, reconfigurable pseudo-NMOS-like logic is proposed. Based on the hybrid SETMOS inverter/buffer circuit cell, reconfigurable pseudo-NMOS-like logics that can work normally at room temperature are constructed. This kind of reconfigurable logic can implement up to 2n sorts of functions at n inputs...

2003
Patricia Giacomelli Márcio C. Schneider Carlos Galup-Montoro

This paper presents MOSVIEW, a graphical tool for transistor-level design of analog MOS circuits. MOSVIEW allows students to visualize and explore the design space in order to size and bias the transistor for a given set of specifications.

Journal: :IEEE Electron Device Letters 2021

This letter addresses the design, implementation, and characterization of a novel high-density Triple Gate Transistor in 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected parallel with main planar transistor. Thanks built-in trenches, proposed manufacturing process increases transistor width without impacting its footprint. The...

2017
C. Y. Hu

The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic tran...

2016
Ravneet Kaur Gurmohan Singh Manjit Kaur

The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...

2000
Yngvar Berg Øivind Naess Mats Erling Høvin

The minimum supply voltage in low-voltage circuits can be defined as Vsup,min = 2(Vgs+Vsat) [1]. Low-voltage circuits are able to operate on a supply voltage of two stacked gate-source voltages and two saturation voltages. Differential amplifiers are biased with a transistor feeding a differential pair, where the current level is set by the bias transistor. The minimum input voltage in a NMOS i...

2014
Rozita Farhadi Bita Farhadi

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Far...

2009
IAN M. ROSS

The invention of the transistor almost 50 years ago was one of the most important technical developments of this century. It has had profound impact on the way we live and the way we work. The first part of this paper covers the events that led to the discovery of the transistor effect and the invention of the point contact transistor in December of 1947. It continues with the development of th...

2016
Peng Zheng

The remarkable proliferation of information and communication technology (ICT) – which has had dramatic economic and social impact in our society – has been enabled by the steady advancement of integrated circuit (IC) technology following Moore’s Law, which states that the number of components (transistors) on an IC “chip” doubles every two years. Increasing the number of transistors on a chip ...

Journal: :IEEE Trans. on CAD of Integrated Circuits and Systems 1996
Manjit Borah Robert Michael Owens Mary Jane Irwin

A direct approach to transistor sizing for minimizing the power consumption of a CMOS circuit under a delay constraint is presented. In contrast to the existing assumption that the power consumption of a static CMOS circuit is proportional to the active area of the circuit, it is shown that the power consumption is a convex function of the active area. Analytical formulation for the power dissi...

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