Single crystalline SnO2 nanocrystals (~60 nm in size) with a uniform octahedral shape were synthesised using a hydrothermal method. Their phase and morphology were characterized by XRD and FESEM observation. TEM and HRTEM analyses identified that SnO2 octahedral nanocrystals grow along the [001] direction, consisting of dominantly exposed {221} high energy facets. When applied as anode material...

The increasing demand of emerging technologies for high energy density electrochemical storage has led many researchers to look for alternative anode materials to graphite. The most promising conversion and alloying materials do not yet possess acceptable cycle life or rate capability. In this work, we use tin oxide, SnO2, as a representative anode material to explore the influence of graphene ...

Chemical and magnetic states of iron doped tin oxide (SnO2) as a diluted magnetic semiconductor (DMS) at room temperature have been investigated using 57Fe Mössbauer spectrometry, XRD and magnetometery. The influence of the doping conditions of SnO2 with iron on the generation of oxygen defects was reviewed and discussed on the basis of ab initio calculations. The magnetic properties depended o...

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type ti...

Temperature-dependent terahertz conductivity of tin oxide (SnO2) nanowire films was measured from 10 to 300 K using terahertz time-domain spectroscopy. The optical parameters, including the complex refractive index, optical conductivity and dielectric function, were obtained using a simple effective medium theory. The complex conductivity was fitted with the Drude–Smith model and the plasmon mo...

Tin dioxide (SnO2) has recently been recognized as an excellent electron transport layer (ETL) for perovskite solar cells (PSCs) due to its advantageous properties, such high mobility, suitable energy band alignment, simple low-temperature process, and good chemical stability. In this work, nitrogen-doped graphene quantum dots (N-GQDs) were prepared using a hydrothermal method then used fabrica...

Tin oxide (SnO2) is a transparent semiconductor with a wide band gap and electrical resistivity as low as 2 10 4 Ω 3 cm and high infrared reflectivity, over 90%. 4 These properties are achieved using n-type doping by substituting fluorine for about 1% of the oxygen. The low electrical resistance and optical transparency in SnO2 are widely used in applications such as solar cells, displays, touc...

The bulk SnO2 was synthesized by oxidizing the fine powder (50 mesh) of metallic tin (purity 99.99, Aldrich) powder at 750°C for 9 hrs hours in programmable temperature controlled furnace. The gross structure and phase purity of the powder sample ground from sintered pellets were examined by powder X-ray diffraction technique. The phase identification /gross structural characteristics of synthe...

The SnO2 films deposited from inorganic precursors via sol–gel dip coating method have been found to be highly sensitive to methanol and ethanol vapor. Three dimensional nano-structure materials have attracted the attention of many researches because the possibility to apply them for near future devices in sensors, catalysis and energy related. The sensitivity and selectivity of SnO2 (110) nano...

Undoped and Sb-doped SnO2 sol–gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). The evolution of the Sn–O chemical bonds in the SnO2 during...