The refractive index and thickness of SiO2 thin films naturally grown on Si substrates were determined simultaneously within the wavelength range of 220–1100 nm with variableangle spectroscopic ellipsometry. Different angles of incidence and wavelength ranges were chosen to enhance the analysis sensitivity for more accurate results. Several optical models describing the practical SiO2-Si system...

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scaven...

It is known that micron-scale polycrystalline silicon thin films can fail in room air under high frequency (40kHz) cyclic loading at fully-reversed stress amplitudes as low as half the fracture strength, with fatigue lives in excess of 1011 cycles. This behavior has been attributed to the sequential oxidation of the silicon and environmentally-assisted crack growth solely within the SiO2 surfac...

We propose a closed form formulation for the impedance of the metal-insulator-metal (MIM) plasmonic transmission lines by solving the Maxwell's equations. We provide approximations for thin and thick insulator layers sandwiched between metallic layers. In the case of very thin dielectric layer, the surface waves on both interfaces are strongly coupled resulting in an almost linear dependence of...

The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses of interfacial Ti-bonding layers. Reactions in the Pt/Ti/SiO2/Si interface were examined as a function of various annealing conditions in the temperature range 200-800°C by using Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffraction, and tra...

We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin films of Pt/Co/Pt and Pt/Co/Ir/Pt. To study the effective DMI, arising at either side of the ferromagnet, we use a fielddriven domain wall creep-based method. The use of only magnetic field removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as wel...