In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the subsequent functional layers (e.g., gate oxide) can be done using CVD and ALD reactors in a cluster t...

Germanium is well-known for its good electronic properties, but also for the poor passivationquality of its natural or thermally-grown oxide layer. The robust passivation of Ge surfaces isthus a crucial step on the way to its integration in electronics at nanoscale. Before passivation,the natural oxide layer must be removed from the surface. Different methods wereinvestigate...

Muon spin rotation with low-energy muons (LE-µSR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions thin films can be studied on length scale ≈200 nm. This study shows the potential utilizing for depth-resolved characterization oxide-semiconductor interfaces, i.e., silicon (Si) carbide (4H-SiC). The performance semiconductor devices relies heavily qua...

Thermal barrier coating (TBC) systems are susceptible to delamination failures in the presence of a large thermal gradient. These failures, which occur within the TBC layer, are very different in character from those associated with the thermally grown oxide. Three possible causes of internal delamination are analyzed. In all cases, the thermomechanical properties of the TBC are allowed to vary...

Scanned beams of 0.1 MeV/u Au ions were employed for the bombardment of silicon oxide films thermally grown on silicon (1 0 0) substrates. Subsequently the films were etched in aqueous HF solution (1% and 4%) for various times and at different temperatures. Scanning force microscopy and transmission electron microscopy images of etched films reveal conical holes with diameters from 20 to 350 nm...

The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been investigated and compared to those of Si-implanted SiO2 films. It is found that the blue-violet PL from both Si and Ge-rich layers reaches a maximum after annealing at 500 C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from...

Using periodic density-functional theory (DFT), we investigated the structure and cohesive properties of the -alumina 11 tilt grain boundary, with and without segregated elements, as a model for the thermally grown oxide in jet engine thermal barrier coatings. We identified a new low-energy structure different from what was proposed previously based on electron microscopy and classical potentia...

Charge trapping and the generation of interface traps in thermally grown Si02 and its interface with silicon, produced by Fowler-Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been a...