Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability these systems in thin-film form synthesized through simple, scalable, straightforward technique. Metal-organic chemical vapor deposition (MOCVD) has shown to be an outstanding proc...

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. focus on Si, the most promising donor dopant, and study structural properties, formation energies charge-state transition levels of its various configurations. also explore impact C H, which are common impurities metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$,...

Optimal deposition conditions to synthesize highly conductive and transparent CuCrO2 films out of stoichiometry Cu2O + nanocomposite by AA-MOCVD at a low temperature atmospheric pressure.

Thinning the buffer layer thickness between GaN epilayer and Si substrate without introducing large residual stress is persistently desired for GaN-on-Si devices to promote their thermal budgets low-cost, multifunctional applications. In this work, heterostructures were directly bonded at room temperature by surface activated bonding (SAB) therein states investigated confocal micro-Raman. The e...

Abstract The structurally related cobalt β‐diketonate complexes Co(acac) 2 , ⋅ TMEDA, Co(tfac) and Co(hfac) TMEDA (acac=2,4‐pentanedionate, tfac=1,1,1‐trifluoro‐2,4‐pentane‐dionate, hfac=1,1,1,5,5,5‐hexafluoro‐2,4‐pentane‐dionate, TMEDA= N ′, ′‐tetramethylethylenediamine) were thermochemically (thermogravimetric analysis, differential scanning calorimetry) spectroscopically (infrared, UV‐VIS el...

Solar-blind metal–semiconductor–metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current–voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and ...