Novel chemical vapor deposition (CVD) process was successfully developed for the growth of Sr2Si5N8:Ce phosphors with elevated luminescent properties. Metallic strontium was used as a vapor source for producing Sr3N2 vapor to react with Si3N4 powder via a homogeneous gas-solid reaction. The phosphors prepared via the CVD process showed high crystallinity, homogeneous particle size ranging from ...

Novel chemical vapor deposition (CVD) process was successfully developed for the growth of Sr2Si5N8:Ce3+ phosphors with elevated luminescent properties. Metallic strontium was used as a vapor source for producing Sr3N2 vapor to react with Si3N4 powder via a homogeneous gas-solid reaction. The phosphors prepared via the CVD process showed high crystallinity, homogeneous particle size ranging fro...

We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, wh...

Nanostructured materials made from group 10 (Ni, Pd, Pt) and 11 (Cu, Ag, Au) elements have outstanding technological relevance in microelectronics, nano-optics, catalysis, energy conversion. Processes that allow for the easy reliable fabrication of such nanostructures are heavily sought after. Focused electron beam induced deposition (FEBID) is only direct-write technique can fabricate with arb...

in this study un-doped and eu-doped zno nanorods and microrads were fabricated by chemical vapor deposition (cvd) method. the effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of eu-doped zno samples were studied in detail. prepared samples were characterized using x-ray diffraction (xrd), scanning electron microscopy (sem), particle size a...

Chemical vapor deposition (CVD) is one of the key technologies for the epitaxial crystal growth of semiconductors. In order to obtain high-performance devices, atomically controlled thin films are required. Layer by layer growth consists of various processes, i.e ., the thermal decomposition of precursors, the adsorption of growing species, their surface migration, two-dimensional nucleation, t...

Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, appro...