نتایج جستجو برای: thermal chemical vapor deposition
تعداد نتایج: 673952 فیلتر نتایج به سال:
CaCu3Ti4O12 possesses one of the largest values of the effective dielectric permittivity in a large frequency and temperature range ever reported for a ceramic material, and is thus a very promising material for various electronic and electromechanical applications. The origin of such high permittivity has been attributed to ‘electrical’ heterogeneities in the microstructure [1-3]. By Chemical ...
ELECTROLESS DEPOSITION OF SUPERCONDUCTING MAGNESIUM DIBORIDETHIN FILMS ON VARIOUS SUBSTRATES
Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely e...
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in this paper, a new model based on kinetic theory of gases and longitude oscillations of metallic nanocluster on single carbon nanotube (cnt) in addition to phononvibrations of cnt on substrate is presented to describe the growth mechanism of ultra-long cnt in chemical vapor deposition (cvd).interaction between cnt and catalyst is investigated by lennard-jones potential. simulations demonstrat...
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