Using analytical techniques and Langevin dynamics simulations, we investigate the dynamics of polymer translocation into a narrow channel of width R embedded in two dimensions, driven by a force proportional to the number of monomers in the channel. Such a setup mimics typical experimental situations in nano/microfluidics. During the translocation process if the monomers in the channel can suff...

Densely deployed WiFi networks will play a crucial role in providing the capacity for next generation mobile internet. However, due to increasing interference, overlapped channels in WiFi networks and throughput efficiency degradation, densely deployed WiFi networks is not a guarantee to obtain higher throughput. An emergent challenge is how to efficiently utilize scarce spectrum resources, by ...

A receiver channel topology for a pulsed time-of-flight (TOF) laser rangefinder is presented. The designed compact IC receiver chip realized in 0.35 μm CMOS technology will include both a highperformance receiver channel and a time-to-digital converter (TDC). Its timing detection is based on the leading edge detection in the receiver channel. Amplitude-dependent timing error is compensated for ...

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flow passing through lateral intakes and channel junctions is turbulent. sediment flow and bed forms areaffected by these flow patterns and vice versa. in this research, a laboratory study was carried out toexplore a possible method for sediment control for a set of submerged vanes and a single spur dikesimultaneously. since a larger portion of the near-bed flow was diverted, the intake receive...

The problem under investigation contains a computational simulation of a specific heat exchanger with complex geometry fins. The problem solved is potentially interesting for researchers and engineers working on solar collectors and aerospace industry. It is known that heat transfer enhancement can be achieved by creating longitudinal vortices in the flow. These vortices can be generated by arc...

This article describes the effect of temperature on the threshold voltage, low field mobility and S/D series parasitic resistance of PMOS over operating temperature range of 27 C to 125 C. The relation of IDS and VGS in a linear region was used with a different of channel length at a fixed value of channel width that effect of the channel width is excluded. The extraction procedure is based on ...