In this article we introduce a novel operating principle for a temperature modulated electronic nose. The aim is to perform gas discrimination with metal oxide gas sensors in natural, uncontrolled environments where the sensor is exposed to patches of gas only for short periods of time. The proposed Parallelized Temperature Modulated e-nose (PTM e-nose) allows to speed-up discrimination of gase...

* 1301 Beal Ave., Ann Arbor, MI 48109, USA; Tel: (734) 763-6132, E-mail: [email protected] ABSTRACT This paper reports microdischarge-based pressure sensors which operate by measuring the change in spatial current distribution of pulsed DC microdischarges. The sensors are composed of 3D arrays of horizontal bulk metal electrodes embedded in quartz substrates. Microdischarge-based pressure sens...

Wide band-gap semiconductor materials such silicon carbide (SiC), gallium nitride (GaN), and diamond (C) based electronic devices may operate at temperatures above the high temperature limit of silicon technology. Among these wide band gap materials, single crystal SiC is the most mature material at this stage. SiC has such excellent physical and chemical material properties that SiC microsyste...

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter...

Based on the necessity for enclosure protection of temperature and relative humidity sensors installed in a hostile environment, a wind tunnel was used to quantify the time that the sensors take to reach equilibrium in the environmental conditions to which they are exposed. Two treatments were used: (1) sensors with polyvinyl chloride (PVC) enclosure protection, and (2) sensors with no enclosur...

This article describes the behavior of CernoxTM zirconium oxynitride film temperature sensors from Lake Shore Cryotronics, Inc. in magnetic fields up to 32 T at temperatures between 2 and 286 K. Results from a number of sensors with different dimensionless temperature sensitivities and from different production batches are analyzed and compared with previous results on carbon-glass sensors that...

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason a silicon-based pressure sensor with an application temperature ranging up to 300 C and the associated manufacturing technology was developed. With ...