The interplay of exchange correlations and spin-orbit interaction (SOI) on the many-body spectrum of a copper phtalocyanine (CuPc) molecule and their signatures in transport are investigated. We first derive a minimal model Hamiltonian in a basis of frontier orbitals that is able to reproduce experimentally observed singlet-triplet splittings. In a second step SOI effects are included perturbat...

Compressed natural gas direct injection (DI-CNG) systems in spark ignition (SI) internal combustion engines have shown that it can give several benefits compared to CNG port fuel systems. However, the DI-CNG injector nozzle head design and jet formation may greatly influence engine exhaust emissions performance. Present experimental study investigated of 7 different designs spray-guided injecto...

We describe the design of an embedded 128-Kb Silicon-OnInsulator (SOI) CMOS SRAM, which is integrated alongside an array of pitch-matched processing elements to provide massively-parallel data processing within one integrated circuit. An experimental 0.25m fully-depleted SOI process was used. The design and layout of the SOI memory core and results from calibrated circuit simulations are presen...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

Silicon-on-insulator (SOI) wafers are nowadays being prominently used for the manufacture of new generation semiconductor devices. In order to maximize the device yield, the device industry is seeking SOI wafers that meet very stringent wafer specifications such as very low wafer bow and warp. An SOI wafer can undergo severe process-induced stresses during its manufacture leading to significant...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

In recent years, the mobile communication market represented by the mobile telephone has been showing remarkable growth. This market has been making tough demands for semiconductor integrated circuits, which are mounted components, to consume less power, have higher integration, have multi-function capability, and be faster. We at Oki have been working on developing complete depletion type SOI ...

Recent trends in device design bring a need for SOI wafers with ultra thin BOX below 100A. Difficulties in production of UTBOX SOI wafer by the Smart CutTM technology are highlighted. New process of internal BOX dissolution allows to overcome interface defectivity problems and results in high quality UTBOX and DSB wafers. Mechanism of internal BOX dissolution is presented together with the resu...

By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba BR and Dresselhaus D spin-orbit interaction SOI , we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly singular be...

We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectro...