نتایج جستجو برای: spad 4735

تعداد نتایج: 1412  

2009
Thomas Frach Carsten Degenhardt Rik de Gruyter Anja Schmitz Rob Ballizany

We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bi...

Journal: :journal of ornamental plants 2000
hassan bayat morteza alirezaie hossein neamati ali abdollahi saadabad

a pot experiment was carried out to determine the effect of foliage spraying of silicon (si) on growth and ornamental characteristics of calendula grown under salt stress and greenhouse conditions. a factorial experiment based on completely randomized design was conducted with 3 levels of si (0, 50 and 100 mg/l) and 3 levels of nacl (0, 100 and 200 mm) with 4 replications. at flowering stage, s...

2015
Juan MATA PAVIA

In the past decades different methods based on magnetic resonance imaging (MRI) and positron emission tomography (PET) have been developed to image a variety of hemodynamic parameters in tissue. However, simultaneous high resolution imaging of oxyand deoxyhemoglobin is not yet possible in clinical practices with millimeter accuracy. Nearinfrared Spectroscopy (NIRS) is a well established techniq...

2011
Lucio Pancheri Nicola Massari Fausto Borghetti David Stoppa

CMOS Single Photon Avalanche Diode (SPAD) arrays are emerging as appealing solid-state detectors in imaging applications where high sensitivity and timing resolution are required. In this work, a 32x32-pixel array where SPAD digital output is processed in the analog domain in a 12-transistor pixel is presented. A 25m pixel pitch with a remarkable 20.8% fill factor was achieved thanks to a very...

2012
S. Burri

We present the challenges of using single-photon avalanche diodes in large arrays and the architectures employed in the readout systems. We also discuss the elements that make these imagers appealing for some applications and why.

2017
Syed Haleem Shah Rasmus Houborg Matthew F. McCabe Peter Langridge

Abiotic stress can alter key physiological constituents and functions in green plants. Improving the capacity to monitor this response in a non-destructive manner is of considerable interest, as it would offer a direct means of initiating timely corrective action. Given the vital role that plant pigments play in the photosynthetic process and general plant physiological condition, their accurat...

2007
Justin Richardson Robert K. Henderson David Renshaw

We propose the use of dynamic circuits for quenching avalanche events in single photon avalanche diode (SPAD) arrays. Two area-efficient, circuit solutions are presented in 0.35μm CMOS technology. These circuits contain no passive elements and consume shoot-through current only at triggering instants. The resulting reduction in power consumption and supply noise is essential to formation of lar...

2009
Christopher R. Boomsma Tony J. Vyn

Although maize (Zea mays L.) routinely experiences both intraand interspecific competition for limited resources, most plant-plant interaction studies have principally focused on maize-weed interactions. Thus very few investigations have considered the impacts of plant crowding and nitrogen (N) availability on maize intra-specific competition. The primary objective of this two-year field study ...

2017
Ziyang You Luca Parmesan Robert K. Henderson

A shared well 4x4 SPAD array test structure with 3m pitch is realized in a 130nm CMOS image sensor technology. The SPADs have 150Hz median DCR at room temperature at 1V excess bias, 15% peak PDP and 176ps FWHM timing jitter both at 3V excess bias.

2017
Ziyang You Luca Parmesan Sara Pellegrini Robert K. Henderson

A shared well 4x4 SPAD array test structure with 3m pitch is realized in a 130nm CMOS image sensor technology. The SPADs have 150Hz median DCR at room temperature at 1V excess bias, 15% peak PDP and 176ps FWHM timing jitter both at 3V excess bias.

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