Highly oriented NiFe thin films have been produced via sputter deposition on HF etched Si substrates. Cu and Ag are used as underlayers to induce the epitaxial growth of NiFe films. The orientation relationships between NiFe, Cu, Ag, and Si have been determined by x-ray diffraction measurements and transmission electron microscopy. Magnetic properties have also been characterized. © 1999 Americ...

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/S...

We apply the techniques of special Kähler geometry to investigate AdS4 vacua of general N = 2 gauged supergravities underlying flux compactifications of type II theories. We formulate the scalar potential and its extremization conditions in terms of a triplet of prepotentials Px and their special Kähler covariant derivatives only, in a form that recalls the potential and the attractor equations...

Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques Yu Wang, Chin-Yi Chen, Gerhard Klimeck, Michelle Y. Simmons & Rajib Rahman Scientific Reports 6:31830; doi: 10.1038/srep31830; published online 23 August 2016; updated on 30 November 2016 This Article contains errors in Figure 4 where the hyperfine values for the donor separations along the [110] direction were c...

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer delta doping of interstitial Mn (Mn(int)) are half-metallic. For Mn(int) concentrations of 1/2 or 1 layer, the states induced in the band gap of delta-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed hetero...

The electroluminescence (EL) and photoluminescence of Si nanocrystals (Si-nc) from multilayered samples of Si/SiO are investigated. Si-nc are formed within Si and SiO layers after furnace annealing. It is found that the presence of Si interlayers creates extra carrier paths for EL emission. A comparative study is further performed on a multilayered Si/SiO sample and a single-layered one with Si...

By first principles atomistic analysis we demonstrate how controlled localized doping distributions in nanoscale Si transistors can suppress leakage currents. We consider dopants (B and P atoms) to be randomly confined to a ≈1  nm width doping region in the channel. If this region is located away from the electrodes, roughly 20% of the channel length L, the tunneling leakage is reduced 2× compa...

A low-temperature, Si-deficient variety of vesuvianite occurs in porous tetrahedral “achtarandite” pseudomorphs consisting of hibschite, along the banks of the Wiluy River, Yakutia, Russia, the type locality of grossular and wiluite. The (H4O4)-for(SiO4) hydrogarnet-type substitution is evident in the vesuvianite, a substitution that allows it to be considered an analogue of hibschite. This var...

A bis(phosphine)/triflatosilyl pincer-type Rh(i) complex can reversibly store one equivalent of H2 across the Si-Rh bond upon triflate migration from silicon to rhodium. The triflatosilyl complex serves as an effective precatalyst for norbornene hydrogenation, but Si-OTf bond cleavage is not implicated in the major catalytic pathway. The combined findings suggest possible strategies for M/Si co...

Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-N...