A detailed understanding of the origin of the electrophoretic force on DNA molecules in a solid-state nanopore is important for the development of nanopore-based sequencing technologies. Because of the discrepancies between recent attempts to predict this force and both direct and indirect experimental measurements, this topic has been the focus of much recent discussion. We show that the force...

Recent investigations of microcavity frequency combs based on cascaded four-wave mixing have revealed a link between the evolution of the optical spectrum and the observed temporal coherence. Here we study a silicon nitride microresonator for which the initial four-wave mixing sidebands are spaced by multiple free spectral ranges (FSRs) from the pump. Additional lines then fill in to yield a co...

We report time domain observations of optical instability in high Q silicon nitride whispering gallery disk resonators. At low laser power the transmitted optical power through the disk looks chaotic. At higher power, the optical output settles into a stable self-pulsing regime with periodicity ranging from hundreds of milliseconds to hundreds of seconds. This phenomenon is explained by the int...

We develop a method for interpolating the optical properties of silicon nitride formed with different deposition parameters. Published refractive index measurements for eight silicon nitride films formed by in-line microwave plasma-enhanced chemical-vapour deposition with a range of ammonia to silane gas-flow ratios are modelled and interpolated. The measurements are fitted by a physical model ...

Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour d...

We study the transverse oscillatory modes of nanomechanical silicon nitride strings under high tensile stress as a function of geometry and mode index m≤9. Reproducing all observed resonance frequencies with classical elastic theory we extract the relevant elastic constants. Based on the oscillatory local strain we successfully predict the observed mode-dependent damping with a single frequency...

Keywords: RF MEMS capacitive switch Dielectric charging Silicon nitride PECVD method a b s t r a c t The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on t...

Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...

We demonstrated micron scale silicon nitride photonic structures. We have measured lowest propagation losses (~ 0.1 dB/cm at 1550 nm) in highest confinement waveguides (900 × 750 nm) reported to date. We fabricated ring cavities with optical quality factor over 3,000,000 [1]. With a silicon oxide cladded cavity, we observed optical parametric oscillations (1243-2043 nm), a first for a fully int...