A continuum mechanics theory is established for the in-surface buckling of one-dimensional nanomaterials on compliant substrates, such as silicon nanowires on elastomeric substrates observed in experiments. Simple analytical expressions are obtained for the buckling wavelength, amplitude and critical buckling strain in terms of the bending and tension stiffness of the nanomaterial and the subst...

Silicon nanowires are expected to have applications in transistors, sensors, resonators, solar cells and thermoelectric systems. Understanding the surface properties and dopant distribution will be critical for the fabrication of high-performance devices based on nanowires. At present, determination of the dopant concentration depends on a combination of experimental measurements of the mobilit...

We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental d...

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the t...

Structures and energetics of various types of silicon nanowires have been investigated using both quantum and classical molecular dynamics simulations to determine the most stable forms. The tetrahedral type nanowires have been found to be the most stable and, surprisingly, the polycrystalline forms of nanowires, while having the smallest surface to bulk ratio, are found to be the least stable....

Submitted for the MAR08 Meeting of The American Physical Society Self assembled silicon nanowire Schottky junction assisted by collagen1 DIDIER STIEVENARD, IEMN DptISEN, BILLEL SAHLI, IEMN-Dpt ISEN, YANNICK COFFINIER, RABAH BOUKHERROUB, IRI FRE2963, OLEG MELNYK, IBL UMR8525, IEMN DPTISEN TEAM, IRI TEAM, IBL TEAM — We present results on self assembled silicon nanowire Schottky junction assisted ...

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural st...

Well-ordered tilted silicon nanobelt arrays have been fabricated over a large area (≥2.5 cm(2)) by metal assisted chemical etching of pre-patterned silicon, which demonstrated markedly enhanced solar hydrogen evolution performance, compared with planar silicon of the same type and previously reported silicon nanowires prepared in a similar way.

Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowir...

Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches @311# for nanowires with a high density of microtwins and is @211# for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configurati...