نتایج جستجو برای: sic nanotube
تعداد نتایج: 29726 فیلتر نتایج به سال:
C. A. Fuchs and M. Sasaki defined the quantumness of a set of quantum states in [1], which is related to the fidelity loss in transmission of the quantum states through a classical channel. In [4], Fuchs showed that in d-dimensional Hilbert space, minimum quantumness is 2 d+1 , and this can be achieved by all rays in the space. He left an open problem, asking whether fewer than d states can ach...
Aims. The SiC optical constants are fundamental inputs for radiative transfer (RT) models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (β) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for βand α-SiC derived from single-crystal re...
Performance of optical code division multiple access (O-CDMA) system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. To overcome this problem, successive interference cancellation (SIC) scheme is applied to O-CDMA systems. In this paper we apply successive interference cancellation technique to a spectral amplitude coding (SAC) system that us...
Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal gro...
Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...
کامپوزیت های c-sic ساخته شده به روش lsi به دلیل برخورداری از وزن کم، خواص مکانیکی بالا و مقاومت اکسید شدن خوب در صنایع هوا-فضا بسیار مورد توجه هستند. این کامپوزیت ها زمانی که کامپوزیت های کربن-کربن بدلیل اکسیداسیون در دمای بالا غیر قابل استفاده اند، کاربرد دارند. در این تحقیق سعی شد تا برای اولین بار در ایران با مطالعه سنتز و استخراج مزوفاز از قیرهای ایرانی، قطعات کربنی با استفاده از mcmb ساخته...
Soil inorganic carbon (SIC) and organic carbon (SOC) are important carbon reservoirs in terrestrial ecosystems. However, little attention was paid to SIC dynamics in cropland. We conducted a survey in the upper Yellow River Delta of North China Plain. We collected 155 soil samples from 31 profiles, and measured SOC, SIC and soluble Ca2+ and Mg2+ contents. Our results showed that mean SOC conten...
The growth properties of b-SiC on ~100! Si grown by rapid thermal chemical vapor deposition, using a single precursor ~methylsilane! without an initial surface carbonization step, were investigated. An optimun growth temperature at 800 °C was found to grow single crystalline materials. A simple Al Schottky barrier fabricated on n-type SiC grown on Si substrates exhibited a ‘‘hard’’ reverse brea...
The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely tr...
In this work, the interactions between tungsten (W) and silicon carbide (SiC) in Sigma SiC fibers at high temperatures were characterized using scanning and transmission electron microscopy. These fibers could have the potential for use in fusion-related applications owing to their high thermal conductivity compared with pure SiC-based fibers. The as-received fibers were composed of a 100-μm-th...
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