BACKGROUND AND PURPOSE The aims of this study are to evaluate the risk factors for symptomatic ischemic complication (symptomatic ischemic complication [SIC], transient ischemic attack, or stroke) and microembolisms detected as MR diffusion-weighted imaging (MR-DWI)-positive (DWI(+)) lesions, and the relationship between DWI(+) and SIC after coiling of unruptured intracranial aneurysm. METHOD...

In recent years, much attention has been paid to the behavior of passive microwave sea ice concentration (SIC) products for marginal ice zones. Based on the definition of ice edges from ship observations, we identified pseudo-ship observations (PSO) and generated PSO ice edges from twelve cloud-free moderate-resolution imaging spectroradiometer (MODIS) images. Two SIC products of the advanced m...

Silicon carbide (SiC) is a particularly interesting species of presolar grain because it is known to form on the order of a hundred different polytypes in the laboratory, and the formation of a particular polytype is sensitive to growth conditions. Astronomical evidence for the formation of SiC in expanding circumstellar atmospheres of asymptotic giant branch (AGB) carbon stars is provided by i...

P ower electronics fabricated on the Silicon Carbide (SiC) platform can operate at higher temperatures, higher frequencies, and can delive higher circuit efficiencies as compared to traditional Si-based technologies [1]. The SiC transistors are especially attractive at 1.2 kV-10 kV ratings, particularly for medium and high-frequency applications [2]. Though SiC-based Schottky diodes were readil...

We present here the first infrared spectra of meteoritic SiC grains. The mid-infrared transmission spectra of meteoritic SiC grains isolated from the Murchison meteorite were measured in the wavelength range 2.5–16.5 μm, in order to make available the optical properties of presolar SiC grains. These grains are most likely stellar condensates with an origin predominately in carbon stars. Measure...

The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...