نتایج جستجو برای: si3n4
تعداد نتایج: 1511 فیلتر نتایج به سال:
The structure of alkylsiloxane self-assembled monolayers formed on HF-treated Si3N4 has been studied using x-ray photoelectron spectroscopy, high-resolution electron energy-loss spectroscopy, and contact angle analysis. It is shown that the monolayers are similar in quality to those formed on oxidized silicon, despite the fact that upon etching in HF, the Si3N4 surface contains only 0.2 ML of o...
We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase mod...
This work presents the investigation of some commercially available and commonly used Si3N4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si3N4 film...
We are focusing on the developed by us the mathematical analysis methods of the data obtained by three independent spectroscopic techniques and their application to study of atomic and chemical composition profiles across the air-exposed systems SrTiOx/B/Si with interfacial layers (B: SiO2, Si3N4 and HfO2) grown by the atomic layer deposition technique. It was established that the material of t...
The properties of semiconductor materials can be strongly affected by the addition metallic nanoparticles. Here we investigate SiC + Au and Si3N4 thin films prepared magnetron sputtering deposition followed thermal annealing. influence gold on optical electrical is explored. We show formation self-assembled nanoparticles in Si3N4, with size arrangement determined annealing conditions. Both SiC-...
Enhanced self-phase modulation in silicon nitride waveguides integrated with 2D graphene oxide films
We experimentally demonstrate enhanced self-phase modulation (SPM) in silicon nitride (Si3N4) waveguides integrated with 2D graphene oxide (GO) films. GO films are onto Si3N4 using a solution-based, transfer-free coating method that enables precise control of the film thickness. Detailed SPM measurements carried out both picosecond and femtosecond optical pulses. Owing to high Kerr nonlinearity...
The first demonstration of a nanoscaled titanium zirconium nitride (TiZrN2) single-phase isolated during the preparation polymer-derived silicon (Si3N4) matrix nanocomposites is discussed. We employed polysilazane, which was chemically modified with Zr[N(CH2CH3)2]4 and Ti[N(CH3)2]4 then ammonolyzed before pyrolysis step under ammonia (1000 °C) heat-treatment in flowing nitrogen (1000–1700 °C). ...
Integrated optics platforms offer the possibility to implement compact photonic devices for nonlinear optics applications. Modern nanofabrication facilities allow the fabrication of sub-micron-sized waveguide geometries that confine light to reach very high optical intensities. These intensities enable efficient nonlinear processes that are further enhanced by using materials with high nonlinea...
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