نتایج جستجو برای: shotcky barrier diode

تعداد نتایج: 109997  

2004
Behnam Jamali Peter Cole Damith Ranasinghe Zheng Zhu

In this paper, we present and analyze the most fundamental constraint of RFID systems, power rectification. This issue plays an important role in development of long-range RFID systems. Rectifiers are the key components in power rectifications and efficiency of an RFID system. Therefore this paper is concentrated in investigating this major issue. To tackle this problem a novel Schottky Barrier...

2009
X. F. Han Z. C. Wen Y. Wang L. Wang H. X. Wei

Nano-scale patterned techniques, DCpulsed-current-driven magnetization switching and spin-dependent transport properties of magnetic tunnel junctions (MTJs) are presented in this paper. The experiments show that the spin transfer torque (STT) plays a main switching role in the magnetization current switching and the current-induced circular magnetic field plays an assisted-switching role in the...

2007
F. Podevin D. Lippens

This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...

2016
Changxin Chen Chenghao Liao Liangming Wei Hanqing Zhong Rong He Qinran Liu Xiaodong Liu Yunfeng Lai Chuanjuan Song Tiening Jin Yafei Zhang

A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied t...

Journal: :Optics letters 2001
M K Lee C H Chu Y H Wang S M Sze

We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum effic...

Journal: :Dentistry today 2012
Glenn van As

Soft tissue can act as a barrier in many cases during r safely and efficiently around dental hard tissue (tooth structure and bone) as well as around metals ( brackets, implants, amalgam, gold etc.). Although monopolar electrosurge units can be used around dental hard tissues, they cannot be safely used around metals as they can cause catastrophic iatrogenic damage (1-3), so the diode laser can...

Journal: :Optics letters 2013
Julien Pouysegur Martin Delaigue Yoann Zaouter Clemens Hönninger Eric Mottay Anaël Jaffrès Pascal Loiseau Bruno Viana Patrick Georges Frédéric Druon

We report on the first diode-pumped Yb:CaGdAlO4 regenerative amplifier in the sub-100-fs regime. It generates pulses at a central wavelength of 1047 nm with up to 24 μJ energy (after compression) at a repetition rate of 50 kHz. The measured pulse duration is 97 fs, with a spectral bandwidth of 19 nm. We describe in detail how nonlinear effects are optimally used to compensate gain narrowing in ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید