We present a systematic study of optical transitions in a modulation doped Cd12xMnxTe quantum well with variable concentration of the hole gas. Using a semimagnetic semiconductor as the quantum well material allowed us to control independently the total hole concentration and its distribution between the two spin subbands ~by a small magnetic field!. Therefore, in transmission experiment we ana...

We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.

Neareld optical microscopy and spectroscopy is emerging as a powerful tool for the investigation of semiconductor structures. Tunable excitation combined with subwavelength resolution is providing an unprecedented level of detail on the local optical properties of semiconductor structures. Recent neareld optical studies have addressed issues of laser diode mode pro ling, minority carrier transp...

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in qu...

LUDWIG, R., P I E P ~ , w., and WEBER, H. G.: ‘Photonic ATM switching with semiconductor laser amplifier gates’, Electron. Lett., 1992, 28, (15), pp. 1438-1439 SAXTOFT, c.: ‘Photonic packet switch experiment employing a 2 t 2 switch matrix and a semiconductor laser amplifier’. Proc. Photonic Switching Topical Meeting, Kobe, Japan, 1990, Postdeadline Paper 14B-7 4 FORTENBERRV, R. M., LOWERY, A. ...

We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long...

Introduction: The lasing wavelength of a semiconductor laser inevitably changes with varying the operation temperature, which is, however, not desirable for applications requiring specific and stable light wavelength. Thus, laser diodes with wavelength insensitive to temperature are fascinating and can drastically ease the critical requirements on precise temperature control. The quantum dot (Q...

In this review, we present the photoreflectance (PR) spectroscopy as a powerful tool for investigations of bulk semiconductors and semiconductor heterostructures. We discuss the application of PR technique to investigation of various properties of semiconductors, including the composition of multinary compounds, distribution of the built-in electric field and the influence of perturbations such...