We theoretically study the current-phase relation in semiconductor nanowire Josephson junction in the presence of spin-orbit interaction. In the nanowire, the impurity scattering with strong SO interaction is taken into account using the random matrix theory. In the absence of magnetic field, the Josephson current I and phase difference φ between the superconductors satisfy the relation of I(φ)...

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Abstract In this paper, three-dimensional technology computer aided design simulations are used to show that the electron concentration, current density, and electric field distribution from interface at lateral channels top channel centre of silicon wire, in nanowire nanosheet structures, practically same. This characteristic makes it possible consider total width for these structures is equal...

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We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution and gate action. The effective electrostatic gate width and screening effects are taken into account. A pivotal aspect is that the gate coupling to the nanowire is compromised by ...

We report the first piezoelectric potential gated hybrid field-effect transistors based on nanotubes and nanowires. The device consists of single-walled carbon nanotubes (SWNTs) on the bottom and crossed ZnO piezoelectric fine wire (PFW) on the top with an insulating layer between. Here, SWNTs serve as a carrier transport channel, and a single-crystal ZnO PFW acts as the power-free, contact-fre...