Many remarkable semiconductor-based nanolaser cavities using metal have been reported in past few years. However, the efficient coupling of these small cavities to waveguides still remains a large challenge. Here, we show highly efficient coupling of a semiconductor-based metal-clad nanolaser cavity operating in the fundamental dielectric cavity mode to a silicon-on-insulator waveguide. By engi...

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

Semiconductor-metal hybrid nanoparticles manifest efficient light-induced spatial charge separation at the semiconductor-metal interface, as demonstrated by their use for hydrogen generation via water splitting. Here, we pioneer a study of their functionality as efficient photocatalysts for the formation of reactive oxygen species. We observed enhanced photocatalytic activity forming hydrogen p...

Graphene-based materials are elective materials for a number of technologies due to their unique properties. Also, semiconductor nanocrystals have been extensively explored due to their size-dependent properties that make them useful for several applications. By coupling both types of materials, new applications are envisaged that explore the synergistic properties in such hybrid nanostructures...

The tunnelling lifetime of an electron lying in a p-type orbital localised at a given distance from a semiconductor or a metal is calculated by using Bardeen’s method. It is then shown that even in the absence of broad bands, the hole injection process from semiconductors and metals into polymers should follow a Fowler-Nordheim dependence, provided that the current is not bulk-limited. In the s...

The dependence of Schottky barrier formation on surface and interface preparation offers several broad avenues for understanding electronic structure and charge transfer at metal/semiconductor junctions. Interface cathodeand photoluminescence measurements reveal that electrically active deep levels form at III-V and II-VI compound semiconductor surfaces and metal interfaces which depend on temp...

The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNC) memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement wi...

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...