Recently, an urgent requirement of ultraviolet (UV) semiconductor laser with lower cost and higher performance has motivated our intensive research in zinc oxide (ZnO) material owing to its wide direct band gap and large exciton binding energy. Here, we demonstrate for the first time continuous-wave laser in electrically-pumped hollow polygonal microcavities based on epitaxial ZnO/MgO-core/shel...

Related Articles High-power InP quantum dot based semiconductor disk laser exceeding 1.3W Appl. Phys. Lett. 102, 092101 (2013) Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission Appl. Phys. Lett. 102, 091102 (2013) Semiconductor laser monolithically pumped with a light emitting diode operating in the thermoelectrophotonic regime Appl. Phys. Lett. 102, 081116...

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

Tunable blue and ultraviolet single mode laser light has been generated by frequency quadrupling the output of a semiconductor laser with two successive frequency doubling stages. The laser source is based on a commercial high power semiconductor laser near 972 nm which combines a low power single mode master oscillator with a high power amplifier. The doubling stages consist of nonlinear cryst...

We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities the order 10–20 kW cm−2 and room temperature. The structure consists an array metal–semiconductor–metal patches hosting judiciously designed 253 nm thick GaAs/AlGaAs semiconductor heterostructure. At low incident intensity, operates in strong light–matter ...

Due to a number of advantages of diode lasers, such as small size, light weight, high efficiency etc., it has been the focus of the laser field from the beginning of the birth and has been widely used in industrial, military, medical, communications and other fields. Especially, to a great extent, a tremendous growth in the technology of solid-state lasers has been complemented by laser diode a...

Low level laser therapy is defined to supply direct biostimulative light energy to the cells .It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. Low-level semiconductor diode lasers have been used in low-level laser therapy ,the...

Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...

Photograph of a mechanically flexible 2D-DFB laser made from the conjugated polymer MeLPPP. The laser is optically pumped well above the threshold for amplified spontaneous emission. The complex far-field emission pattern (blue-green) results from a large detuning between the resonance wavelength and the gain maximum. • A nearly diffraction limited surface emitting conjugated polymer laser util...

Figure 2 shows the configuration of the blue laser developed here. A 976-nm semiconductor laser is employed as fundamental lightwave generator, and after wavelength stabilization using fiber Bragg grating (FBG), the source light is directly coupled to a SHG wavelength conversion device of planar waveguide type. Because, in single-longitudinal-mode operation, the 976-nm semiconductor laser is su...