We report a simple and scalable method for the separation of semiconducting single-walled carbon nanotubes (SWNTs) from metallic SWNTs using magnetic nanoparticles (MNPs) functionalized with polycationic tri-aminated polysorbate 80 (TP80). MNPs-TP80 are selectively adsorbed on acid-treated semiconducting SWNTs, which makes the semiconducting SWNTs be highly concentrated to over 95% under a magn...

A new approach for vectorial growth of single-wall carbon nanotube arrays is presented. The origin of growth is defined by patterning the catalyst nanoparticles, while the direction of growth is defined by a local electric field parallel to the substrate. Statistical analysis of the nanotube angular distribution indicates that field-directed growth can discriminate between metallic and semicond...

The semiconducting properties of electronic grade silicon carbide (SiC) crystals, such as its wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platf...

Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS₂ by in...

Semiconducting nanowires have been pointed out as one of the most promising building blocks for submicron electrical applications. These nanometer materials open new opportunities in the area of post-planar traditional metal-oxide-semiconductor devices. Herein, we demonstrate a new technique to fabricate horizontally suspended silicon nanowires with gate-all-around field-effect transistors. We ...

Thermoelectric transport in semiconductors is usually considered under small thermal gradients and when it is dominated by the role of the majority carriers. Not much is known about effects that arise under the large thermal gradients that can be established in high-temperature, small-scale electronic devices. Here, we report a surprisingly large asymmetry in self-heating of symmetric highly do...

A structural motif designed for enhancing electron–hole separation in semiconducting composite materials, the so-called double bubble, is introduced. The addition of silicon carbide in the construction of heterogeneous double bubble systems, along with zinc oxide and gallium nitride, yields electronic structures that are favourable for electron–hole separation. The standard formation enthalpies...

We present a detailed comparison between ONETEP, our linear-scaling density functional method, and the conventional pseudopotential plane wave approach in order to demonstrate its high accuracy. Further comparison with allelectron calculations shows that only the largest available Gaussian basis sets can match the accuracy of routine ONETEP calculations. Results indicate that our minimization p...

We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for photovoltaic applications. Then, the proposed back contacted BaSi2 solar cell design is investigated and optimized. An implied p...

Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions,...