This paper presents design strategies and measurements of two RF energy harvesting circuits working at UHF frequencies (around 480 MHz). Ambient RF sources are considered so for the circuit designs low power levels have been assumed. The circuits were implemented and the RF/DC conversion efficiency was measured. Index Terms – Matching network, RF energy harvesting, schottky diode, voltage doubler.

Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as p-n junctions or metal/semiconductor interfaces with Schottky barriers. We report on a diode effect associated with the direction of bulk electric polarization in BiFeO3: a ferroelectric with a small optical gap edge of approximately 2.2 el...

This paper presents a piezoelectric energy harvesting system demonstrating the output power enhancement when using a CMOS integrated pulsed-resonance converter (PRC) instead of a simple Schottky diode bridge rectifier. The combination of a storage capacitor, a blinking light emitting diode (LED) and a voltage detector forms a fixed voltage regulator and visualizes the output power extracted out...

Hot electrons and holes created at Ag and Cu surfaces by adsorption of thermal hydrogen and deuterium atoms have been measured directly with ultrathin metal film Schottky diode detectors on Si(111). When the metal surface is exposed to these atoms, charge carriers are excited at the surface, travel ballistically toward the interface, and have been detected as a chemicurrent in the diode. The cu...

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/S...

The characterization of a 1.1-1.7 THz planar Schottky-diode mixer is described. Initial measurements yielded a mixer noise temperature of 5900 K (DSB) and conversion loss of 12 dB (DSB) at 1.57 THz. The responsivity of the mixer was measured to be higher than 200-400 V/W over the frequency range 1.1-1.5 THz. Also, the same diode was used as a 2nd harmonic mixer as part of a solid-state 1.45-1.5...

Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of a...

A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode f...

This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in literature. A numerical modeling method for context multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-th...