نتایج جستجو برای: schottky cell
تعداد نتایج: 1687676 فیلتر نتایج به سال:
A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier heigh...
The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by currentvoltage (IV), capacitancevoltagefrequency (CVf ) and conductancevoltagefrequency (GVf ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (IV)/0.79 eV (CV) and 1.24, respectively. As well, t...
The aim of the present work is to study the optimization of the electrical and optical properties of a-SiC:H Schottky diodes using thermal annealing process to a-SiC:H thin films in the range from 300C up to 675C. The films were deposited onto c-Si(n) using the rf sputtered method at three different hydrogen flow rates, 9sccm, 14sccm, and 20sccm. Subsequently, Al dots evaporated onto a-SiC:H in...
Lithium-rich anti-perovskites (LiRAPs) are a promising family of solid electrolytes, which exhibit ionic conductivities above 10(-3) S cm(-1) at room temperature, among the highest reported values to date. In this work, we investigate the defect chemistry and the associated lithium transport in Li3OCl, a prototypical LiRAP, using ab initio density functional theory (DFT) calculations and classi...
Planar GaAs Schottky diode based multiplier chains driven by HEMT power amplifiers have now demonstrated useful power beyond the 1 THz range. This paper will briefly review the state-of-the-art in planar Schottky diode multiplier chains for coherent detection. Future challenges and promising emerging technologies will also be outlined.
In this paper we look at a special type of discrete subgroups of PSLn+1(C) called Schottky groups. We develop some basic properties of these groups and their limit set when n > 1, and we prove that Schottky groups only occur in odd dimensions, i.e., they cannot be realized as subgroups of PSL2n+1(C).
A left-handed transmission line with regularly spaced Schottky varactors is experimentally characterized. Due to dispersion, an envelop pulse on the line experiences a great distortion. By measuring the test line, we successfully observed that this distortion is compensated for by the nonlinear effects of Schottky varactors. This article describes the experimental observations, together with fu...
Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
The three-dimensional propagation of electromagnetic waves in a distributed Schottky barrier transmission line is investigated. In one case, we show that the electromagnetic fields are similar to those that were originally obtained by Goubau and Schwering in their development of the beam waveguide. This case can lead to a very low-loss distributed Schottky barrier resonator.
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