We have applied laser calorimetry to the measurement of optical absorption in monocrystalline sapphire at cryogenic temperatures. Sapphire is a promising candidate for the mirror substrates of the Large-scale Cryogenic Gravitational wave Telescope. The optical absorption coefficients of different sapphire samples at a wavelength of 1.064 μm at 5K were found to average 90 ppm/cm.

The critical parameters for the structural stability of physical vapor deposited TiN film on (112̄0) sapphire were investigated by analyzing the adhesion strength and failure mechanism through in situ observations of the fracture sequence during scratch tests and static normal indentation. TiN was deposited by arc ion plating on (112̄0) sapphire, and the thickness of the TiN film was controlled t...

Based on the principle of blackbody radiation, sapphire optic fiber temperature sensor has been more widely used in recent years, and its temperature range is between 800 ~ 2000 oC, and the response time is in 10-2 magnitude, and transient temperature measurement can be high precision in harsh environments. Nonlinear constraints on sapphire fiber temperature sensor affect the accuracy and stabi...

Sapphire is a multi-processor/multicore simulator where the memory hierarchy, interconnect (network on chip) and offchip DRAM are parametrized and can be configured to model various configurations. Sapphire addresses shortcomings in SESC by integrating it with Ruby from the GEMS framework. Sapphire also integrates Intacte, an interconnect power model. DRAMSim models off-chip DRAM in great detai...

In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a vacuum-sealed cavity employable for high temperature applications is achieved. Cross-sectional scanning electron microscopy (SEM) research of ...

This paper deals with the design and fabrication of a quartz-crystal resonator used in a thickness-monitor unit, measuring film thickness in a film-depositing system. A purpose-grown quartz crystal is cut to form the desired wafer. Two gold electrodes are deposited on both surfaces of the wafer to provide electrical contacts. The resonance frequency of the resonator, at room temperature, and th...

In this letter, we have successfully transferred the 4-inch crack-free GaN films from sapphire substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) techniques. The resultant 1-mm2 fully-vertical Schottky barrier diodes (SBDs) exhibit a high current swing of 109, low ideality factor 1.03 forward 10 A. Meanwhile, decent breakdown voltage 312 V is achieved, ...

Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film....

INSTRUCTION Sapphire is widely used in the field of optical components and micromechanical devices owing to its useful mechanical, optical, and electrical properties. However, sapphire is mechanically and chemically difficult to machine because of its high hardness and chemical stability. The difficulty of machining sapphire has restricted the development of advanced device structures. As sapph...

High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scat...