The parity of the number of atoms in finite antiferromagnetic nanowires deposited on ferromagnets is shown to be a crucial quantity determining their magnetic ground state. Relating results of the full-potential Korringa-Kohn-Rostoker method for noncollinear magnetism from first principles to a Heisenberg model, we show that the magnetic structure changes dramatically across the entire nanowire...

The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles ca...

The formation of magnetic moment in the p-orbital doped semiconductors is named d0 magnetism, where the ion without partially filled d states is found to be responsible for the magnetism. To study origin of magnetism in such p-orbital doped semiconductors, we report a theoretical investigation of electronic and magnetic properties of N doped MgO, with and without an oxygen vacancy. The first pr...

Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied o...

Pristine graphene is strongly diamagnetic. However, graphene with single carbon atom defects could exhibit paramagnetism. Theoretically, the π magnetism induced by the monovacancy in graphene is characteristic of two spin-split density-of-states (DOS) peaks close to the Dirac point. Since its prediction, many experiments have attempted to study this π magnetism in graphene, whereas only a notab...

Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres su...