A novel type of millimeter/submillimeter wave sampler based on resonant tunneling diodes (RTDs) was proposed, and its operation was confirmed by circuit simulation. It consists of an RTD pulse generator and an RTD detector. Owing to the fuse-like nonlinear I-V curve, highly sensitive sampling can be obtained. We also found that the effects of nonideality in the I-V curve of the RTD can be corre...

A linear-response theory is developed for resonant tunneling through a quantum dot of small capacitance, in the regime of thermally broadened resonances. The theory extends the classical theory of Coulomb-blockade oscillations by Kulik and Shekhter to the resonant-tunneling regime. Both the cases of negligible and strong inelastic scattering in the quantum dot are considered. Effects from the n...

We have considered resonant tunneling through a double tunnel junction where the central island has a mechanical degree of freedom controlling its position with respect to the electrodes. The effects of the coupling between mechanical vibrations of the dot and resonant tunneling of electrons have been studied under the assumption that there is only one available electronic state in the dot. By ...

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...

We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 a...

Recent experiments found an unusual temperature-induced large shift in the resonant-tunneling voltage of certain molecules. We report first-principles calculations showing that such behavior can be caused by the excitation of rotational modes of ligands. These modes have classical characteristics, i.e., the maximum excursion is dominant, while at the same time they have a significant effect on ...

Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. ...

Abstract We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QDRTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to ...

The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling s...

The conditions of resonant (almost complete) tunneling photons (plane monochromatic electromagnetic waves) through layered dielectric and metal-dielectric structures are considered. Resonant occurs at frequencies which the resonance for corresponding open resonators met. For structures, possibility in optical range with a strong barrier IR is shown, can be used to control transmission window pa...