Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical red...

Sensations of breathlessness in the absence of respiratory disease are common in anxiety disorders. Perceptions of breathlessness in eight patients with anxiety disorder were compared with eight normal control subjects, matched for age and sex, by the application of Steven's law to the magnitude of resistive load test. All subjects estimated the magnitudes of resistive loads to inspiration whil...

Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current-voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal-insulator-metal junctions. Silver nanoparticles prepared via the polyol process and...

Resistive memory technologies hold the promise of replacing mainstream on-chip memory while providing enhanced throughput and capacity in modern compute systems. Demonstrating material, process, and circuit compatibility with existing CMOS infrastructures, resistive memories deliver non-volatility, no static power consumption, and improved density. Application of these technologies, however, re...

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-...

Electrically driven resistance change in metal oxides opens up an interdisciplinary research field for next-generation non-volatile memory. Resistive switching exhibits an electrical polarity dependent "bipolar-switching" and a polarity independent "unipolar-switching", however tailoring the electrical polarity has been a challenging issue. Here we demonstrate a scaling effect on the emergence ...

Resistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variab...

We propose dynamic resistive threshold-logic (DRTL) design based on non-volatile resistive memory. A threshold logic gate (TLG) performs summation of multiple inputs multiplied by a fixed set of weights and compares the sum with a threshold. DRTL employs resistive memory elements to implement the weights and the thresholds, while a compact dynamic CMOS latch is used for the comparison operation...

We analyzed the effects of gravitational unloading on muscular fatigability and the effectiveness of resistive vibration exercise to counteract these changes. Changes in knee extensor fatigability as a consequence of 8 weeks of horizontal bedrest with or without daily resistive vibration exercise were evaluated in 17 healthy male volunteers. Bedrest increased fatigability (% decrease in maximal...

Sweet–Parker collisional magnetic reconnection at high Lundquist number is modified by secondary islands. Daughton et al. Phys. Rev. Lett. 103, 065004 2009 suggested the Sweet– Parker model governs the fragmented current sheet segments. If true, the reconnection rate would increase by the square root of the number of secondary islands. High Lundquist number resistive magnetohydrodynamic simulat...