Introduction: The lasing wavelength of a semiconductor laser inevitably changes with varying the operation temperature, which is, however, not desirable for applications requiring specific and stable light wavelength. Thus, laser diodes with wavelength insensitive to temperature are fascinating and can drastically ease the critical requirements on precise temperature control. The quantum dot (Q...

The differential gain, modulation response, and damping rate of strained-layer Ino•3Ga(J•7As multiple quantum well (MQW) short cavity graded-index separate confmement heterostrucutre (GRINSCH) and SCH lasers fabricated by chemically-assisted ion beam etching (CAIBE) are analyzed. Calculated differential gains vary from 0.7 to. 1 .6 x 1015 cm2, with only relatively long lasers of 400 p.m demonst...

Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effecti...

Compressive biaxial strain has been predicted to enhance the small-signal modulation bandwidth of quantum well lasers, owing to increased differential gain in these devices. However, the effect of tensile strain on these devices is less clear. We have investigated the effects of both compressive and tensile strain on the differential gain for multiple quantum well lasers with In,Ga,-As quantum ...

Monolithically combining silicon nitride ( S mathvariant="normal">i mathvariant="normal">N mathvariant="normal">x ) photonics technology with III-V active devices could open a...

Dynamic and static characteristics of high-speed 1.55and 1m wavelength tunneling injection quantum-well lasers and 1m wavelength self-organized quantum-dot lasers, have been measured as a function of temperature. While differential gain of the quantum-well lasers greatly increased with lowering of temperature (by a factor of 50), gain compression increased along with it, resulting in about the ...

We have investigated the regrowth of GaAs/AlAs quarter-wave Bragg reflectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 mm vertical cavity surface emitting lasers. It is seen from transmission electron and scanning electron microscopy that the multiple layer GaAs-based mirrors can be grown on InP-based heterostructure mesas of diameters 10–40 mm w...