Semiconductor quantum dots (QDs) are very important optical nanomaterials with a wide range of potential applications. However, blinking behavior of single QD is an intrinsic drawback for some biological and photoelectric applications based on single-particle emission. Herein we present a rational strategy for fabrication of non-blinking (Zn)CuInS/ZnS QDs in organic phase through in situ interf...

On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes...

We report a single layer InAs/InP (100) quantum dot (QD) laser operating in continuous wave mode at room temperature on the QD ground state transition grown by metal organic vapor phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). This QDs on QW laser exhibits a high slope efficiency and a lasing wavelength of 1.74 μm. An extremely long...

– A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers, radiating two neighboring QDs, and tuned to blue detuning with respect to the resonant frequencies of individual excitons. The two-qubit phase gate can be ...

In this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-perform...

Planar quantum dot clusters (QDCs) consisting of six InGaAs quantum dots (QDs) formed around a GaAs nanomound are the most sophisticated self-assembled QDCs grown by molecular beam epitaxy thus far. We present the first photoluminescence measurements on individual hexa-QDCs with high spatial, spectral, and temporal resolution. In the best QDCs, the excitons confined in individual QDs are remark...

A simple, rapid, cost-efficient and convenient method has been developed for synthesis of water-soluble CdTe quantum dots (QDs) under ambient atmospheric conditions. Using this method, the preparation of Te precursor and growth of CdTe QDs were achieved with one-step synthetic route. Under the optimal conditions, the as-prepared CdTe QDs possessed a high photoluminescence quantum yield (84%), a...

The emerging nanomaterial, quantum dots or QDs, offers numerous potential applications in the biological area. As cell labeling probes, QDs become now an alternative of existing organic fluorescent dyes and fluorescent proteins. In this short review, we cover typical and successful applications of QDs as fluorescent probes in cell labeling and genomic diagnosis. As a future important applicatio...

Photo-oxidation of densely packed monolayer of CdSe quantum dots ~QDs! was studied by time-resolved photoluminescence ~PL! spectroscopy. Electrons yielded in QDs by the strong laser-pulse irradiation can assist the oxidation of CdSe QDs. Such rapid photo-oxidation does not introduce more nonradiative defects, instead, it enhances the coupling between QDs through surface modification and the PL ...

Development of Si-based light emitter has been eagerly anticipated in Si photonics. However, its realization is difficult because group IV semiconductors such as Si and Ge are indirect-transition semiconductors. Si or Ge quantum dots (QDs) on Si substrates have drawn much attention as Si-based light emitting materials because their optical transition probability can be enhanced by their quantum...