in order to comparision of the micromorphic properties of saline-sodic and nonsaline-nonsodic soils in the west of urmia lake, four soil profiles (2profile in saline-sodic soils and 2profiles in nonsaline-nonsodic soils) were investigated. these profiles were described and sampled using standard methods. soil samples were used for physico chemical analysis and undisturbed and oriented samples w...

The transport of ammonia/ammonium is fundamental to nitrogen metabolism in all forms of life. So far, no clear picture has emerged as to whether a protein channel is capable of transporting exclusively neutral NH(3) while excluding H(+) and NH(4)(+). Our research is the first stoichiometric study to show the selective transport of NH(3) by a membrane channel. The purified water channel protein ...

In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOIMOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DI...

INTRODUCTION Ten years ago, the first publication appeared showing patch clamp recordings performed on a planar glass chip instead of using a conventional patch clamp pipette. "Going planar" proved to revolutionize ion channel drug screening as we know it, by allowing high quality measurements of ion channels and their effectors at a higher throughput and at the same time de-skilling the highly...

We examined the actions of ethanol on the single channel properties of large conductance Ca2+-activated K+ (BK) channels isolated from skeletal muscle T-tubule membranes and incorporated into planar lipid bilayer membranes. We have taken advantage of this preparation, because it lacks most elements of cellular complexity, including cytoplasmic constituents and complex membrane lipid composition...

The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power MOSFETs are attributed to a high density oxide traps near the 4H-SiC/SiO2 interface. In this article, commercial 1200-V SiC trench MOSFET has been compared with planar obtained from same manufacturer. We employed newly developed integrated-charge method quantify near-interface (NITs). results reveal that,...